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cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 13 - 15.5ghz power amplifier gaas monolithic microwave ic in smd leadless package description the cha6252 - qfg is a four stages monolithic gaas high power circuit that produces more than 2 watt output power. it is designed for commercial communication systems. the circuit is manufactured with a phemt process, 0.5m gate length. main features output power at 1db comp. main electrical characteristics tamb.= + 25c symbol parameter min typ max unit freq frequency range 13 15.5 ghz gain linear gain 22 db otoi output toi 41.0 dbm pout output power @1db comp. 32.5 dbm 26 27 28 29 30 31 32 33 34 35 36 12 12.5 13 13.5 14 14.5 15 15.5 16 op1db (db) @3 temperatures frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = +7.0v symbol parameter min typ max unit freq frequency range 13 15.5 ghz gain linear gain 22 db g_t linear gain variation versus temp - 0.05 db/c rl_in input return loss - 18 db rl_out output return loss - 11 db op1db output power @1db compression point 32.5 dbm psat saturated output power 35 dbm toi output toi @10 db back off of op1db 41 dbm pae power added efficiency @1db compression 22 % idq quiescent drain current 1.1 a vg gate voltage - 0.45 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 7.5v v id drain bias current 2 a vg gate bias voltage - 2 to +0 v pin input continuous power 15 dbm tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vdx 15, 26, 28, 30, 32 dc drain voltage 7 v vgx 9, 10, 12, 14 dc gate voltage tuned for idq= 1.1a - 0.45 v
13 - 15.5ghz power amplifier cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0 ) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum tempera ture must be adjusted in order to guarantee that tcase remains below the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temper ature cannot be maintained below the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf). recommended max. junction temperature (tj max) : 152 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 7.7 w => pdiss. max. derating above tcase (1) = 85 c : 115 mw/c junction-case thermal resistance (rth j-c) (2) : <8 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 6.4 device thermal specification : CHA6252-QFG 0 1 2 3 4 5 6 7 8 9 - 50 - 25 0 25 50 75 100 125 150 175 pdiss. max. @tj cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 1.1a measurement in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph evaluation mother board linear gain & return loss versus frequency linear gain versus frequency & temperature - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 linear gain and return loss (db) frequency (ghz) linear gain rl_in rl_out 0 5 10 15 20 25 30 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 linear gain (db) @3 temperatures frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
13 - 15.5ghz power amplifier cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0 ) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 1.1a measurement in the qfn access plans, using the proposed land pattern & board, as defined in paragraph evaluation mother board output power at 1 db compression power added efficiency at 1 db compression 26 27 28 29 30 31 32 33 34 35 36 12 12.5 13 13.5 14 14.5 15 15.5 16 op1db (db) @3 temperatures frequency (ghz) temp=25 c temp= - 40 c temp=+85 c 0 5 10 15 20 25 30 35 40 12 12.5 13 13.5 14 14.5 15 15.5 16 pae (%) @3 temperatures frequency (ghz) temp=25 c temp= - 40 c temp=+85 c
cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 1.1a drain current at 1 db compression output toi (dbm) at two pout/tone 1 - 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 12 12.5 13 13.5 14 14.5 15 15.5 16 id (a) @3 temperatures frequency (ghz) temp=25 c temp= - 40 c temp=+85 c 36 37 38 39 40 41 42 43 44 45 12 12.5 13 13.5 14 14.5 15 15.5 16 output toi (dbm) frequency (ghz) pout/tone=15dbm pout/tone=20 dbm
13 - 15.5ghz power amplifier cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0 ) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 1.1a output c/i3 (dbc) versus pout / 2 tones 2 - 30 35 40 45 50 55 60 65 70 75 80 10 12 14 16 18 20 22 24 c/i3 (dbc) pout/2tones (dbm) freq=13 ghz freq=14ghz freq=15 ghz
cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - nc 12 - g3 23 - nc units : mm 2 - nc 13 - nc 24 - nc from the standard : jedec mo - 220 3 - nc 14 - g4 25 - gnd (2) (vhhd) 4 - gnd (2) 15 - d4 26 - d4 33 - gnd 5 - rf in 16 - gnd (2) 27 - nc 6 - gnd (2) 17 - nc 28 - d3 7 - nc 18 - nc 29 - nc 8 - nc 19 - gnd (2) 30 - d2 9 - g1 20 - rf out 31 - gnd (2) 10 - g2 21 - gnd (2) 32 - d1 11 - gnd (2) 22 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
13 - 15.5ghz power amplifier cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0 ) 1 69 86 34 34 evaluation mother board
cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes due to esd protection circuits on rf input, an external capacitance might be requested to isolate the product from external voltage that could be present on the rf access. the dc connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling (100pf & 10nf) on the pc board, as close as possible to the package. d3 rf out rf in g3 5 20 28 12 d4 15 d2 30 d1 32 g4 14 g2 10 g1 9 26
13 - 15.5ghz power amplifier cha6252 - qfg ref. : dscha6252 - qfg2355 - 20 dec 12 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0 ) 1 69 86 34 34 dc schematic 7v, 1.1a d4 d4 g4 g1 20 ? 150 ? 20 ? 15 ? 20 ? g2 g3 d1 d2 d3 150 ? 20 ? 10 ? 10 ? 10 ? 295ma 145ma 70 ma 295ma 295ma rf in rf out
cha6252 - qfg 13 - 15.5ghz power amplifier ref. : dscha6252 - qfg2355 - 20 dec 12 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qu bec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suit able reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environme ntal data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 5x5 rohs compliant package: cha6252 - qfg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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